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INFLUENCE OF THE PVD PROCESS PARAMETERS ON ZNO: AL THIN FILMS

Authors:

Paulina Boryło1

, Krzysztof Matus1, Krzysztof Lukaszkowicz1, Marek Szindler1

Klaudiusz Gołombek1

1Institute of Engineering Materials and Biomaterials, Silesian University of Technology, Konarskiego 18A, 44-100 Gliwice, Poland

Received: 23.02.2017.
Accepted: 18.03.2017.
Available: 30.03.2017.

Abstract:

In recent years a growing interest in searching new material for producing Transparent Conductive Layers (TLC) is observed. ZnO:Al thin films are this type material, interesting due to wide range of potential applications where it can be applied like: transparent electrodes, gas sensors, thin film transistors, sensor devices, electroluminescent diodes and others.
The aim of this paper is to discuss influence of the ZnO:Al film deposition parameters of PVD magnetron sputtering method on TCL structure and its chemical composition. It contains description of the ZnO:Al PVD magnetron sputtering deposition method. It discusses results obtained from the analysis of the microstructure of ZnO:Al thin films using a high resolution scanning electron microscope, layers’ surface topography determined with atomic force microscope and results of chemical composition analyses.

Keywords:

TCL, MZO, PVD, ZnO:Al, SEM, AFM

References:

[1] H.M. Ali, H.A. Mohamed, S.H. Mohamed, Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique. The European Physical Journal Applied Physics, 31(2), 2005: pp.87-93.
[2] M.S. Farhan, E. Zalnezhad A. R. Bushroa, A.A.D. Sarhan, Electrical and Optical Properties of Indium-tin Oxide (ITO) Films by Ion-Assisted Deposition (IAD) at Room Temperature. International Journal of Precision Engineering and Manufacturing, 14 (8), 2013: pp.1465-1469.
[3] L. Wei, C. Shuying, Photoelectric properties of ITO thin films deposited by DC magnetron sputtering. Journal of Semiconductors, 32 (1), 2011: pp.013002.
[4] K. Ellmer, A. Klein, B. Rech, Transparent Conductive Zinc Oxide, Springer, Berlin, 2008.
[5] M. Oshima, K. Yoshino, Characteristic of low resistivity fluorine-doped SnO2 thin films grown by spray pyrolysis. Japanese Journal of Applied Physics, 50 (5S2), 2011. pp.05FB15.
[6] M. M. Ristova, A. Gligorova, I. Nasov, D. Gracin, M. Milun, H. Kostadinova-Boskova, R. Popeski-Dimovski, TiO2 Coating for SnO2:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to H+ Radical Exposure. Journal of Electronic Materials, 41 (11), 2012: pp.3087-3094.
[7] J.C. Manifacier, L. Szepessy J.F. Bresse, M, Perotin, R. Stuck, In2O3:(Sn) and SnO2:(F) films – application to solar energy conversion part II – Electrical and optical properties. Materials Research Bulletin, 14 (2), 1979: pp.163-175.
[8] Zs. Baji, Z. Lábadi, G. Molnár, B. Pécz, K. Vad, Z.E. Horváth, P.J. Szabó, T. Nagata, J. Volk, Highly conductive epitaxial ZnO layers deposited by atomic layer deposition. Thin Solid Films, 562 (-), 2014: pp.485-489.
[9] R. Escudero, R. Escamilla, Ferromagnetic behavior of high-purity ZnO nanoparticles. Solid State Communications, 151 (2), 2011: pp.97-101.
[10] S. Nakamura, T. Mukai, M. Snoh, Candela-class high-brightness InGaN/ AlGaN doubleheterostructure blue-light-emitting diodes. Applied Physics Letters, 64 (13), 1994: pp.1687-1689.
[11] D.M. Bagnall, Y.F. Chen, Z. Zhu, T. Yao, S. Koyama, M.Y. Shen, T. Goto, Optically pumped lasing of ZnO at room temperature. Applied Physics Letters, 70 (17), 1997: pp.2230-2232.
[12] S. Major, K.L, Chopra, Indium-doped zinc oxide films as transparent electrodes for solar cells. Solar Energy Materials, 17 (5), 1988: pp.319-327.
[13] M. Caglar, S. Ilican, Y. Caglar, F. Yakuphanoglu, The effects of Al doping on the optical constants of ZnO thin films prepared by spray pyrolysis method. Journal of Materials Science. Materials in Electronics, 19 (8), 2008: pp.704-708.
[14] F. Maldonado, A. Stashans, Al-doped ZnO: Electronic, electrical and structural properties. Journal of Physics and Chemistry of Solids, 71(5), 2010: pp.784-787.
[15] É.P. da Silva, M. Chaves, S.F. Durrant, P.N. Lisboa-Filho, J.R.R. Bortoleto, Morphological and electrical evolution of ZnO:Al thin films deposited by RF magnetron sputtering onto glass substrates. Materials Research, 17 (6), 2014: pp.1384-1390.
[16] H.W. Wu, R.Y. Yang, C.M. Hsiung, C.H. Chu, Characterization of aluminum-doped zinc oxide thin films by RF magnetron sputtering at different substrate temperature and sputtering power. Journal of Materials Science Materials in Electronics, 41 (1), 2013: pp.166-171.

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0)

Volume 9
Number 1
March 2024

Last Edition

Volume 9
Number 1
March 2024

How to Cite

P. Boryło, K. Matus, K. Lukaszkowicz, M. Szindler, K. Gołombek, Influence of the PVD Process Parameters on ZnO: Al Thin Films. Applied Engineering Letters, 2(1), 2017: 1-5.

More Citation Formats

Boryło, P., Matus, K., Lukaszkowicz, K., Szindler, M., & Gołombek, K. (2017). Influence of the PVD Process Parameters on ZnO: Al Thin Films. Applied Engineering Letters, 2(1), 1-5.

Boryło, Paulina, et al. “Influence of the PVD Process Parameters on ZnO: Al Thin Films.“ Applied Engineering Letters, vol. 2, no. 1, 2017, pp. 1-5.

Boryło, Paulina, Krzysztof Matus, Krzysztof Lukaszkowicz, Marek Szindler, and Klaudiusz Gołombek. 2017. “Influence of the PVD Process Parameters on ZnO: Al Thin Films.“  Applied Engineering Letters, 2 (1): 1-5.

Boryło, P., Matus, K., Lukaszkowicz, K., Szindler, M. and Gołombek, K. (2017). Influence of the PVD Process Parameters on ZnO: Al Thin Films. Applied Engineering Letters, 2(1), pp. 1-5.

INFLUENCE OF THE PVD PROCESS PARAMETERS ON ZNO: AL THIN FILMS

Authors:

Paulina Boryło1

, Krzysztof Matus1, Krzysztof Lukaszkowicz1, Marek Szindler1

Klaudiusz Gołombek1

1Institute of Engineering Materials and Biomaterials, Silesian University of Technology, Konarskiego 18A, 44-100 Gliwice, Poland

Received: 23.02.2017.
Accepted: 18.03.2017.
Available: 30.03.2017.

Abstract:

In recent years a growing interest in searching new material for producing Transparent Conductive Layers (TLC) is observed. ZnO:Al thin films are this type material, interesting due to wide range of potential applications where it can be applied like: transparent electrodes, gas sensors, thin film transistors, sensor devices, electroluminescent diodes and others.
The aim of this paper is to discuss influence of the ZnO:Al film deposition parameters of PVD magnetron sputtering method on TCL structure and its chemical composition. It contains description of the ZnO:Al PVD magnetron sputtering deposition method. It discusses results obtained from the analysis of the microstructure of ZnO:Al thin films using a high resolution scanning electron microscope, layers’ surface topography determined with atomic force microscope and results of chemical composition analyses.

Keywords:

TCL, MZO, PVD, ZnO:Al, SEM, AFM

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0)

Volume 9
Number 1
March 2024

Last Edition

Volume 9
Number 1
March 2024