Journal Menu
Archive
Last Edition

INFLUENCE OF THE PVD PROCESS PARAMETERS ON ZNO: AL THIN FILMS

Authors:

Paulina Boryło1

, Krzysztof Matus1, Krzysztof Lukaszkowicz1, Marek Szindler1

Klaudiusz Gołombek1

1Institute of Engineering Materials and Biomaterials, Silesian University of Technology, Konarskiego 18A, 44-100 Gliwice, Poland

Received: 23 February 2017
Accepted: 18 March 2017
Available: 30 March 2017

Abstract:

In recent years a growing interest in searching new material for producing Transparent Conductive Layers (TLC) is observed. ZnO:Al thin films are this type material, interesting due to wide range of potential applications where it can be applied like: transparent electrodes, gas sensors, thin film transistors, sensor devices, electroluminescent diodes and others.
The aim of this paper is to discuss influence of the ZnO:Al film deposition parameters of PVD magnetron sputtering method on TCL structure and its chemical composition. It contains description of the ZnO:Al PVD magnetron sputtering deposition method. It discusses results obtained from the analysis of the microstructure of ZnO:Al thin films using a high resolution scanning electron microscope, layers’ surface topography determined with atomic force microscope and results of chemical composition analyses.

Keywords:

TCL, MZO, PVD, ZnO:Al, SEM, AFM

References:

[1] H.M. Ali, H.A. Mohamed, S.H. Mohamed, Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique. The European Physical Journal Applied Physics, 31(2), 2005: pp.87-93.
[2] M.S. Farhan, E. Zalnezhad A. R. Bushroa, A.A.D. Sarhan, Electrical and Optical Properties of Indium-tin Oxide (ITO) Films by Ion-Assisted Deposition (IAD) at Room Temperature. International Journal of Precision Engineering and Manufacturing, 14 (8), 2013: pp.1465-1469.
[3] L. Wei, C. Shuying, Photoelectric properties of ITO thin films deposited by DC magnetron sputtering. Journal of Semiconductors, 32 (1), 2011: pp.013002.
[4] K. Ellmer, A. Klein, B. Rech, Transparent Conductive Zinc Oxide, Springer, Berlin, 2008.
[5] M. Oshima, K. Yoshino, Characteristic of low resistivity fluorine-doped SnO2 thin films grown by spray pyrolysis. Japanese Journal of Applied Physics, 50 (5S2), 2011. pp.05FB15.
[6] M. M. Ristova, A. Gligorova, I. Nasov, D. Gracin, M. Milun, H. Kostadinova-Boskova, R. Popeski-Dimovski, TiO2 Coating for SnO2:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to H+ Radical Exposure. Journal of Electronic Materials, 41 (11), 2012: pp.3087-3094.
[7] J.C. Manifacier, L. Szepessy J.F. Bresse, M, Perotin, R. Stuck, In2O3:(Sn) and SnO2:(F) films – application to solar energy conversion part II – Electrical and optical properties. Materials Research Bulletin, 14 (2), 1979: pp.163-175.
[8] Zs. Baji, Z. Lábadi, G. Molnár, B. Pécz, K. Vad, Z.E. Horváth, P.J. Szabó, T. Nagata, J. Volk, Highly conductive epitaxial ZnO layers deposited by atomic layer deposition. Thin Solid Films, 562 (-), 2014: pp.485-489.
[9] R. Escudero, R. Escamilla, Ferromagnetic behavior of high-purity ZnO nanoparticles. Solid State Communications, 151 (2), 2011: pp.97-101.
[10] S. Nakamura, T. Mukai, M. Snoh, Candela-class high-brightness InGaN/ AlGaN doubleheterostructure blue-light-emitting diodes. Applied Physics Letters, 64 (13), 1994: pp.1687-1689.
[11] D.M. Bagnall, Y.F. Chen, Z. Zhu, T. Yao, S. Koyama, M.Y. Shen, T. Goto, Optically pumped lasing of ZnO at room temperature. Applied Physics Letters, 70 (17), 1997: pp.2230-2232.
[12] S. Major, K.L, Chopra, Indium-doped zinc oxide films as transparent electrodes for solar cells. Solar Energy Materials, 17 (5), 1988: pp.319-327.
[13] M. Caglar, S. Ilican, Y. Caglar, F. Yakuphanoglu, The effects of Al doping on the optical constants of ZnO thin films prepared by spray pyrolysis method. Journal of Materials Science. Materials in Electronics, 19 (8), 2008: pp.704-708.
[14] F. Maldonado, A. Stashans, Al-doped ZnO: Electronic, electrical and structural properties. Journal of Physics and Chemistry of Solids, 71(5), 2010: pp.784-787.
[15] É.P. da Silva, M. Chaves, S.F. Durrant, P.N. Lisboa-Filho, J.R.R. Bortoleto, Morphological and electrical evolution of ZnO:Al thin films deposited by RF magnetron sputtering onto glass substrates. Materials Research, 17 (6), 2014: pp.1384-1390.
[16] H.W. Wu, R.Y. Yang, C.M. Hsiung, C.H. Chu, Characterization of aluminum-doped zinc oxide thin films by RF magnetron sputtering at different substrate temperature and sputtering power. Journal of Materials Science Materials in Electronics, 41 (1), 2013: pp.166-171.

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0)

Volume 10
Number 1
March 2025

Loading

Last Edition

Volume 10
Number 1
March 2025

How to Cite

P. Boryło, K. Matus, K. Lukaszkowicz, M. Szindler, K. Gołombek, Influence of the PVD Process Parameters on ZnO: Al Thin Films. Applied Engineering Letters, 2(1), 2017: 1-5.

More Citation Formats

Boryło, P., Matus, K., Lukaszkowicz, K., Szindler, M., & Gołombek, K. (2017). Influence of the PVD Process Parameters on ZnO: Al Thin Films. Applied Engineering Letters, 2(1), 1-5.

Boryło, Paulina, et al. “Influence of the PVD Process Parameters on ZnO: Al Thin Films.“ Applied Engineering Letters, vol. 2, no. 1, 2017, pp. 1-5.

Boryło, Paulina, Krzysztof Matus, Krzysztof Lukaszkowicz, Marek Szindler, and Klaudiusz Gołombek. 2017. “Influence of the PVD Process Parameters on ZnO: Al Thin Films.“  Applied Engineering Letters, 2 (1): 1-5.

Boryło, P., Matus, K., Lukaszkowicz, K., Szindler, M. and Gołombek, K. (2017). Influence of the PVD Process Parameters on ZnO: Al Thin Films. Applied Engineering Letters, 2(1), pp. 1-5.

INFLUENCE OF THE PVD PROCESS PARAMETERS ON ZNO: AL THIN FILMS

Authors:

Paulina Boryło1

, Krzysztof Matus1, Krzysztof Lukaszkowicz1, Marek Szindler1

Klaudiusz Gołombek1

1Institute of Engineering Materials and Biomaterials, Silesian University of Technology, Konarskiego 18A, 44-100 Gliwice, Poland

Received: 23.02.2017.
Accepted: 18.03.2017.
Available: 30.03.2017.

Abstract:

In recent years a growing interest in searching new material for producing Transparent Conductive Layers (TLC) is observed. ZnO:Al thin films are this type material, interesting due to wide range of potential applications where it can be applied like: transparent electrodes, gas sensors, thin film transistors, sensor devices, electroluminescent diodes and others.
The aim of this paper is to discuss influence of the ZnO:Al film deposition parameters of PVD magnetron sputtering method on TCL structure and its chemical composition. It contains description of the ZnO:Al PVD magnetron sputtering deposition method. It discusses results obtained from the analysis of the microstructure of ZnO:Al thin films using a high resolution scanning electron microscope, layers’ surface topography determined with atomic force microscope and results of chemical composition analyses.

Keywords:

TCL, MZO, PVD, ZnO:Al, SEM, AFM

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0)

Volume 10
Number 1
March 2025

Loading

Last Edition

Volume 10
Number 1
March 2025

live macau
live macau 5D
live macau
live macau
live macau
live macau
live sdy lotto
Live sdy
Live hk lotto
Live hk lotto
Live china
Live japan
Live Draw Sgp
Live taiwan
Live taiwan
Live cambodia
Live cambodia
situs toto
jatimtoto
jatimtoto
jatim toto
bandar toto macau
cheat slot
bandar toto macau
paito macau
paito sydney
paito singapore
paito hk
roulette
slot77
rtp slot gacor hari ini
slot deposit via qris
demo slot majong ways
rtp slot gacor hari ini